Decoupling contact and mirror: an effective way to improve the reflector for flip-chip InGaN/GaN-based light-emitting diodes-Reference-Cited by-同舟云学术

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Decoupling contact and mirror: an effective way to improve the reflector for flip-chip InGaN/GaN-based light-emitting diodes

Published:2016-05-26 Issue:26 Volume:49 Page:265106
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Zhu Binbin,Liu Wei,Lu Shunpeng,Zhang Yiping,Hasanov Namig,Zhang Xueliang,Ji Yun,Zhang Zi-Hui,Tan Swee Tiam,Liu Hongfei,Demir Hilmi Volkan

Funder

National Research Foundation of Singapore

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0022-3727/49/i=26/a=265106/pdf

Reference14 articles.

1. Advances in the LED Materials and Architectures for Energy-Saving Solid-State Lighting Toward “Lighting Revolution”

2. High-Power GaN-Based Light-Emitting Diodes Using Thermally Stable and Highly Reflective Nano-Scaled Ni–Ag–Ni–Au Mirror

3. Nanometer sized Ni-dot/Ag/Pt structure for high reflectance of p-type contact metal in InGaN light emitting diodes

4. Formation process of high reflective Ni∕Ag∕Au Ohmic contact for GaN flip-chip light-emitting diodes

5. High reflective p-GaN/Ni/Ag/Ti/Au Ohmic contacts for flip-chip light-emitting diode (FCLED) applications

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1. Impact of grain growth of silver reflective electrode by electron bombardment on external quantum efficiency of III-nitride micro-light-emitting diode arrays;Applied Surface Science;2020-05

2. Impact of Silver Surface Morphology on the Wall Plug Efficiency of Blue Vertical Light-Emitting Diodes;IEEE Transactions on Electron Devices;2019-06

3. Morphologies and optical and electrical properties of InGaN/GaN micro-square array light-emitting diode chips;Applied Optics;2018-04-04

4. On the Hole Injection for III-Nitride Based Deep Ultraviolet Light-Emitting Diodes;Materials;2017-10-24

5. Enhanced light extraction efficiency of a InGaN/GaN micro-square array light-emitting diode chip;Optical Materials Express;2017-08-16

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