Semipolar single component GaN on planar high index Si(11h) substrates-Reference-Cited by-同舟云学术

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Semipolar single component GaN on planar high index Si(11h) substrates

Published:2010-10-04 Issue:14 Volume:97 Page:142102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Ravash Roghaiyeh,Blaesing Juergen,Dadgar Armin,Krost Alois

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3492835

Reference13 articles.

1. Substrates for gallium nitride epitaxy

2. A. Dadgar and A. Krost, in Vacuum Science and technology: Nitrides as Seen by the Technology, edited by T. Paskova and B. Monemar (Research Signpost, 2002), pp. 196–241.

3. Epitaxy of GaN on silicon—impact of symmetry and surface reconstruction

4. Growth of single-domain GaN layers on Si(001) by metalorganic vapor-phase epitaxy

5. Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes

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1. Nitride Semiconductors;Metalorganic Vapor Phase Epitaxy (MOVPE);2019-08-30

2. GaN-On-Si Epitaxy;digital Encyclopedia of Applied Physics;2019-08-20

3. Controlling the orientations of directional sputtered non- and semi-polar GaN/AlN layers;Japanese Journal of Applied Physics;2019-05-22

4. Semipolar GaN(10–11) Epitaxial Layer Prepared on Nano‐Patterned SiC/Si(100) Template;physica status solidi (b);2018-09-26

5. Semipolar GaN Layers Grown on Nanostructured Si(100) Substrate;Technical Physics Letters;2018-06

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