Semipolar GaN(10–11) Epitaxial Layer Prepared on Nano‐Patterned SiC/Si(100) Template-Reference-Cited by-同舟云学术

Semipolar GaN(10–11) Epitaxial Layer Prepared on Nano‐Patterned SiC/Si(100) Template

Published:2018-09-26 Issue:2 Volume:256 Page:1800268
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Bessolov Vasily¹,Zubkova Anna²,Konenkova Elena¹^ORCID,Konenkov Steven³,Kukushkin Sergey⁴,Orlova Tatiana¹,Rodin Sergey¹,Rubets Vladimir⁵,Kibalov Dmitry⁶,Smirnov Valery⁶

Affiliation:

1. Ioffe InstituteRussian Academy of SciencesPolitekhnicheskaya, 26St. Petersburg 194021Russia

2. Saint Petersburg Electrotechnical University “LETI”Professora Popova 5St. Petersburg 197376Russia

3. St. Petersburg State UniversityUniversitetskaya Emb, 7/9St. Petersburg 199034Russia

4. Institute of Problems of Mechanical EngineeringRussian Academy of SciencesV. O., Bolshoj prosp., 61St. Petersburg 199178Russia

5. St. Petersburg State Institute of Technology (Technical University)Moskovskiy pr, 26St. Petersburg 190013Russia

6. Quantum Silicon LLCStremyanny pereulok, 38Moscow 115054Russia

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssb.201800268

Reference22 articles.

1. K.Ding V.Avrutin N.Izyumskaya S.Metzner F.Bertram J.Christen U.Ozgur H.Morkoc Proc. SPIE2018 10532(Gallium Nitride Materials and Devices XIII) 1053208;https://doi.org/10.1117/12.2291281

2. Topical Review: Development of overgrown semi-polar GaN for high efficiency green/yellow emission

3. Growth of single-domain GaN layers on Si(001) by metalorganic vapor-phase epitaxy

4. Poly- and single-crystalline h-GaN grown on SiCN/Si(100) and SiCN/Si(111) substrates by MOCVD

5. Hexagonal AlN Layers Grown on Sulfided Si(100) Substrate

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