Poly- and single-crystalline h-GaN grown on SiCN/Si(100) and SiCN/Si(111) substrates by MOCVD-Reference-Cited by-同舟云学术

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Poly- and single-crystalline h-GaN grown on SiCN/Si(100) and SiCN/Si(111) substrates by MOCVD

Published:2006-10 Issue:10 Volume:35 Page:1837-1841
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:Journal of Elec Materi

Author:

Chang Shiuan-Ho,Fang Yean-Kuen,Ting Shyh-Fann,Lin Chun-Yue,Chen Shih-Fang,Kuan Hon,Liang Chin-Yung

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s11664-006-0165-2.pdf

Reference13 articles.

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2. R. Armitage, Q. Yang, H. Feick, J. Gebauer, E.R. Weber, S. Shinkai, and K. Sasaki, Appl. Phys. Lett. 81, 1450 (2002).

3. M. Seon, T. Prokofyeva, M. Holtz, S.A. Nikishin, N.N. Faleev, and H. Temkin, Appl. Phys. Lett. 76, 1842 (2000).

4. D. Wang, Y. Hiroyama, M. Tamura, M. Ichikawa, and S. Yoshida, Appl. Phys. Lett. 77, 1846 (2000).

5. L.S. Wang, K.Y. Zang, S. Tripathy, and S.J. Chua, Appl. Phys. Lett. 85, 5881 (2004).

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1. Application of XRD methods for the pilot studies of new functional materials for photonics;Journal of Physics: Conference Series;2018-12

2. Semipolar GaN(10–11) Epitaxial Layer Prepared on Nano‐Patterned SiC/Si(100) Template;physica status solidi (b);2018-09-26

3. The growth of 3C-SiC on Si substrate using a SiCN buffer layer;Thin Solid Films;2018-09

4. Temperature of InxGa1−xN/GaN solar cells with a multiple-quantum-well structure on SiCN/Si(111) substrates;Solar Energy Materials and Solar Cells;2013-07

5. Design and fabrication of InxGa1−xN/GaN solar cells with a multiple-quantum-well structure on SiCN/Si(111) substrates;Thin Solid Films;2011-11

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