Temperature of InxGa1−xN/GaN solar cells with a multiple-quantum-well structure on SiCN/Si(111) substrates
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials
Reference24 articles.
1. InGaN/GaN multiple quantum well solar cells with long operating wavelengths;Dahal;Applied Physics Letters,2009
2. High quantum efficiency InGaN/GaN solar cells with 2.95eV band gap;Neufeld;Applied Physics Letters,2008
3. Temperature dependences of InxGa1−xN multiple quantum well solar cell;Jeng;Journal of Physics D: Applied Physics,2009
4. In1−xGaxAs1−yPy/InP multiple quantum well solar cell structures;Raisky;Journal of Applied Physics,1998
5. Quantum well solar cells;Barnham;Physica E,2002
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1. Progress in Thin Film Solar Cell and Advanced Technologies for Performance Improvement;Encyclopedia of Smart Materials;2022
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3. Effect of Strain-Modulated Multiple Quantum Wells on Carrier Dynamics and Spectral Sensitivity of III-Nitride Photosensitive Devices;IEEE Sensors Journal;2020-05-15
4. Analytical Study of Performance Parameters of InGaN/GaN Multiple Quantum Well Solar Cell;IEEE Transactions on Electron Devices;2019-08
5. Efficiency improvement for InGaN/GaN multiple-quantum-well solar cells with vertical configuration;Applied Physics A;2016-10
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