Growth of hexagonal GaN on Si(111) coated with a thin flat SiC buffer layer
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Reference17 articles.
1. GaN heteroepitaxial growth on silicon nitride buffer layers formed on Si (111) surfaces by plasma-assisted molecular beam epitaxy
2. High-quality coalescence of laterally overgrown GaN stripes on GaN/sapphire seed layers
3. Structure of GaN films grown by hydride vapor phase epitaxy
4. The role of threading dislocations in the physical properties of GaN and its alloys
5. Effect of Very Thin SiC Layer on Heteroepitaxial Growth of Cubic GaN on Si (001)
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