Effects of periodic delta-doping on the properties of GaN:Si films grown on Si (111) substrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1832758
Reference24 articles.
1. GaN-based optoelectronics on silicon substrates
2. The growth of single crystalline GaN on a Si substrate using AIN as an intermediate layer
3. Growth of hexagonal GaN on Si(111) coated with a thin flat SiC buffer layer
4. GaN growth on Si(111) substrate using oxidized AlAs as an intermediate layer
5. GaN on Si Substrate with AlGaN/AlN Intermediate Layer
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