Investigation of interface abruptness and In content in (In,Ga)N/GaN superlattices-Reference-Cited by-同舟云学术

Investigation of interface abruptness and In content in (In,Ga)N/GaN superlattices

Published:2016-09-28 Issue:12 Volume:120 Page:125307
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Chèze Caroline¹,Siekacz Marcin¹²,Isa Fabio¹³,Jenichen Bernd¹^ORCID,Feix Felix¹,Buller Jakov¹,Schulz Tobias⁴,Albrecht Martin⁴,Skierbiszewski Czeslaw²,Calarco Raffaella¹,Riechert Henning¹

Affiliation:

1. Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V, Hausvogteiplatz 5–7, 10117 Berlin, Germany

2. TopGaN sp. z o. o., Sokolowska 29/37, 01-142 Warsaw, Poland

3. Laboratory for Solid State Physics, ETH Zürich, Otto-Stern-Weg 1, CH-8093 Zurich, Switzerland

4. Leibniz-Institut für Kristallzüchtung, Max-Born-Str. 2, 12489 Berlin, Germany

Funder

European Commission (EC)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4963273

Reference39 articles.

1. The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes

2. Optically pumped 500 nm InGaN green lasers grown by plasma-assisted molecular beam epitaxy

3. Nanostructure formation and emission characterization of blue emission InN/GaN quantum well with thin InN well layers

4. Fabrication and characterization of novel monolayer InN quantum wells in a GaN matrix

5. Band Structure and Quantum Confined Stark Effect in InN/GaN superlattices

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3. Indium segregation in ultra-thin In(Ga)As/GaAs single quantum wells revealed by photoluminescence spectroscopy;Applied Physics Letters;2021-02-08

4. Influence of Mg doping on In adsorption and In incorporation in (In,Ga)N superlattices;Journal of Applied Physics;2020-08-28

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