Band Structure and Quantum Confined Stark Effect in InN/GaN superlattices
Author:
Affiliation:
1. Institute of High Pressures Physics, Polish Academy of Sciences, Warsaw, Poland
2. Department of Physics and Astronomy, Aarhus University, DK-8000 Aarhus C, Denmark
Publisher
American Chemical Society (ACS)
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/cg300315r
Reference32 articles.
1. Proposal and achievement of novel structure InN∕GaN multiple quantum wells consisting of 1 ML and fractional monolayer InN wells inserted in GaN matrix
2. Fabrication and characterization of novel monolayer InN quantum wells in a GaN matrix
3. Growth and properties of near-UV light emitting diodes based on InN/GaN quantum wells
4. Polarization property of deep-ultraviolet light emission from C-plane AlN/GaN short-period superlattices
5. Band gap engineering of wurtzite and zinc-blende GaN/AlN superlattices from first principles
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