Optically pumped 500 nm InGaN green lasers grown by plasma-assisted molecular beam epitaxy-Reference-Cited by-同舟云学术

Optically pumped 500 nm InGaN green lasers grown by plasma-assisted molecular beam epitaxy

Published:2011-09-15 Issue:6 Volume:110 Page:063110
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Siekacz M.,Sawicka M.,Turski H.,Cywiński G.,Khachapuridze A.,Perlin P.,Suski T.,Boćkowski M.,Smalc-Koziorowska J.,Kryśko M.,Kudrawiec R.,Syperek M.,Misiewicz J.,Wasilewski Z.,Porowski S.,Skierbiszewski C.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3639292

Reference20 articles.

1. The Blue Laser Diode

2. Recent achievements of AlInGaN based laser diodes in blue and green wavelength

3. Development of High Power Green Light Emitting Diode Chips

4. 510–515 nm InGaN-Based Green Laser Diodes onc-Plane GaN Substrate

5. Continuous-Wave Operation of 520 nm Green InGaN-Based Laser Diodes on Semi-Polar {20\bar21} GaN Substrates

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