’’Surface exchange’’ doping of MBE GaAs from S and Se ’’captive sources’’
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.90499
Reference5 articles.
1. Impurity profiles of GaAs epitaxial layers doped with Sn, Si, and Ge grown with molecular beam epitaxy
2. Molecular beam epitaxial GaAs layers for MESFET’s
3. In situ characterization of MBE grown GaAs and Al x Ga1−x As films using RHEED, SIMS, and AES techniques
4. Back‐surface emitting GaAsxSb1−xLED’s (λ=1.0 μm) prepared by molecular‐beam epitaxy
5. Molecular‐beam epitaxy (MBE) of In1−xGaxAs and GaSb1−yAsy
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