Molecular beam epitaxial GaAs layers for MESFET’s
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.88926
Reference2 articles.
1. GaAs FET Prepared with Molecular Beam Epitaxial Films
2. GaAs MESFET prepared by molecular beam epitaxy (MBE)
Cited by 24 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Molecular beam epitaxy of gallium arsenide using direct radiative substrate heating;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1986-03
2. Optimisation of spacer layer thickness in n-AlxGa1−xAs/p+-GaAs heterojunction diodes grown by molecular beam epitaxy;Electronics Letters;1986
3. High‐performanceK‐band GaAs power field‐effect transistors prepared by molecular beam epitaxy;Applied Physics Letters;1983-06
4. Electrical and photoluminescence properties of Ge-doped n-type GaAs Grown by molecular beam epitaxy;Journal of Electronic Materials;1983-01
5. Defects in Heavily-Doped MBE GaAs;Proceedings, annual meeting, Electron Microscopy Society of America;1982-08-13
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