Optimisation of spacer layer thickness in n-AlxGa1−xAs/p+-GaAs heterojunction diodes grown by molecular beam epitaxy-Reference-Cited by-同舟云学术

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Optimisation of spacer layer thickness in n-AlxGa1−xAs/p+-GaAs heterojunction diodes grown by molecular beam epitaxy

Published:1986 Issue:12 Volume:22 Page:627
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Khamsehpour B.,Singer K.E.,Van Den Berg J.A.,Vickerman J.C.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_19860430?crawler=true&mimetype=application/pdf

Reference6 articles.

1. Shockley, W.: (US patent no. 2569347)

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. MBE-grown (GaIn)P/GaAs heterojunction bipolar transistors exhibiting current gains up to 200;IEEE Transactions on Electron Devices;1990-03

2. GaAs-GaAsSb based heterojunction bipolar transistor;Electronics Letters;1990

3. Effect of the detailed growth conditions on the injection efficiency of (N)AlGaAs‐(p+)GaAs heterojunctions produced by molecular‐beam epitaxy;Journal of Applied Physics;1989-06-15

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