Controlled n-type doping of antimonides and arsenides using GaTe
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference18 articles.
1. Engineered heterostructures of 6.1-Angstrom III-V semiconductors for advanced electronic and optoelectronic applications
2. Heuristic rules for group IV dopant site selection in III–V compounds
3. Heterojunction bipolar transistor utilising AlGaSb/GaSb alloy system
4. ’’Surface exchange’’ doping of MBE GaAs from S and Se ’’captive sources’’
5. N- type doping of gallium antimonide and aluminum antimonide grown by molecular beam epitaxy using lead telluride as a tellurium dopant source
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1. A Study on the Effects of Gallium Droplet Consumption and Post Growth Annealing on Te-Doped GaAs Nanowire Properties Grown by Self-Catalyzed Molecular Beam Epitaxy;Catalysts;2022-04-19
2. Te-doped selective-area grown InAs nanowires for superconducting hybrid devices;Physical Review Materials;2022-02-24
3. A study of dopant incorporation in Te-doped GaAsSb nanowires using a combination of XPS/UPS, and C-AFM/SKPM;Scientific Reports;2021-04-15
4. A study of n-doping in self-catalyzed GaAsSb nanowires using GaTe dopant source and ensemble nanowire near-infrared photodetector;Nanotechnology;2020-10-02
5. Epitaxial High-Yield Intrinsic and Te-Doped Dilute Nitride GaAsSbN Nanowire Heterostructure and Ensemble Photodetector Application;ACS Applied Electronic Materials;2020-08-27
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