Epitaxial High-Yield Intrinsic and Te-Doped Dilute Nitride GaAsSbN Nanowire Heterostructure and Ensemble Photodetector Application-Reference-Cited by-同舟云学术

Epitaxial High-Yield Intrinsic and Te-Doped Dilute Nitride GaAsSbN Nanowire Heterostructure and Ensemble Photodetector Application

Published:2020-08-27 Issue:9 Volume:2 Page:2730-2738
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Pokharel Rabin¹,Ramaswamy Priyanka²,Devkota Shisir¹,Parakh Mehul¹,Dawkins Kendall¹,Penn Aubrey³⁴,Cabral Matthew³⁴^ORCID,Reynolds Lewis³,Iyer Shanthi¹^ORCID

Affiliation:

1. Nanoengineering, Joint School of Nanoscience and Nanoengineering, North Carolina A&T State University, Greensboro, North Carolina 27411, United States

2. Department of Electrical and Computer Engineering, North Carolina A&T State University, Greensboro, North Carolina 27411, United States

3. Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695, United States

4. Analytical Instrumentation Facility, North Carolina State University, Raleigh, North Carolina 27695, United States

Funder

Air Force Office of Scientific Research

Office of Naval Research

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.0c00450