Self-catalyzed growth of dilute nitride GaAs/GaAsSbN/GaAs core-shell nanowires by molecular beam epitaxy-Reference-Cited by-同舟云学术

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Self-catalyzed growth of dilute nitride GaAs/GaAsSbN/GaAs core-shell nanowires by molecular beam epitaxy

Published:2015-09-07 Issue:10 Volume:107 Page:103111
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kasanaboina Pavan Kumar¹^ORCID,Ahmad Estiak²,Li Jia¹²,Reynolds C. Lewis³,Liu Yang³,Iyer Shanthi¹²

Affiliation:

1. Department of Electrical and Computer Engineering, North Carolina A&T State University, Greensboro, North Carolina 27411, USA

2. Nanoengineering, Joint School of Nanoscience and Nanoengineering, NCA&T State University, Greensboro, North Carolina 27401, USA

3. Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695, USA

Funder

Army Research Office (ARO)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4930887

Reference23 articles.

1. GaNAsSb Alloy and Its Potential for Device Applications

2. GaInNAsSb for 1.3-1.6-μm-long wavelength lasers grown by molecular beam epitaxy

3. GaInAs/GaAs quantum-well growth assisted by Sb surfactant: Toward 1.3 μm emission

4. Dilute nitride InGaAsN/GaAs V-groove quantum wires emitting at 1.3 μm wavelength at room temperature

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