Doping of InP and GaInAs during organometallic vapor‐phase epitaxy using disilane
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.340945
Reference11 articles.
1. Doping studies for InP grown by organometallic vapor phase epitaxy
2. A comparison of IV and VI n-dopants for MOVPE-grown InP
3. Disilane: A new silicon doping source in metalorganic chemical vapor deposition of GaAs
4. Silicon and germanium doping of epitaxial gallium arsenide grown by the trimethylgallium-arsine method
5. Doping of gallium arsenide in a low pressure organometallic CVD system
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1. Incorporation of Si during vapor phase epitaxy of III-V compounds: Evidence of an enthalpy-entropy compensation effect;Journal of Applied Physics;2018-09-07
2. Mid-IR optical properties of silicon doped InP;Optical Materials Express;2017-06-07
3. The Science and Practice of Metal-Organic Vapor Phase Epitaxy (MOVPE);Handbook of Crystal Growth;2015
4. CVD Grown Materials for High Temperature Electronic Devices : A Review;Transactions of the Indian Ceramic Society;2011-01
5. Effects of V/III ratio on InGaAs and InP grown at low temperature by LP-MOCVD;Journal of Crystal Growth;2004-01
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