Incorporation of Si during vapor phase epitaxy of III-V compounds: Evidence of an enthalpy-entropy compensation effect
Author:
Affiliation:
1. Département de Génie Physique, Polytechnique Montréal, and Regroupement Québécois sur les Matériaux de Pointe (RQMP), CP 6079 Succ. Centre-ville, Montréal, Quebec H3C 3A7, Canada
Funder
Fonds de Recherche du Québec - Nature et Technologies
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5031106
Reference24 articles.
1. Doping in III-V Semiconductors
2. Computational chemistry predictions of reaction processes in organometallic vapor phase epitaxy
3. Gas phase and surface reactions in Si doping of GaAs by silanes
4. Isokinetic Relationship, Isoequilibrium Relationship, and Enthalpy−Entropy Compensation
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1. Ubiquity of the kinetic compensation effect: A consequence of the existence of a maximum in energy dissipation;Journal of Applied Physics;2022-08-28
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