Gas phase and surface reactions in Si doping of GaAs by silanes
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference25 articles.
1. Disilane: A new silicon doping source in metalorganic chemical vapor deposition of GaAs
2. Silicon doping of GaAs and AlxGa1−xAs using disilane in metalorganic chemical vapor deposition
3. A Study of Silicon Incorporation in GaAs MOCVD Layers
4. Silicon doping using disilane in low-pressure OMVPE of GaAs
5. Doping of gallium arsenide in a low pressure organometallic CVD system
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