Disilane: A new silicon doping source in metalorganic chemical vapor deposition of GaAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.94621
Reference12 articles.
1. A new method for the growth of GaAs epilayer at low H2 pressure
2. A New Method for Growing GaAs Epilayers by Low Pressure Organometallics
3. Silicon and germanium doping of epitaxial gallium arsenide grown by the trimethylgallium-arsine method
4. The pyrolysis of disilane and rate constants of silene insertion reactions
5. The pyrolysis of monosilane
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