A comparison of IV and VI n-dopants for MOVPE-grown InP
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference18 articles.
1. Planar doping by interrupted MOVPE growth of GaAs
2. MOCVD n-type doping of GaAs and GaAlAs using silicon and selenium and fabrication of double heterostructure bipolar transistor
3. Doping studies for InP grown by organometallic vapor phase epitaxy
4. Tin doping of MOVPE grown gallium arsenide using tetraethyltin
5. A New Method for Growing GaAs Epilayers by Low Pressure Organometallics
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1. Incorporation of Si during vapor phase epitaxy of III-V compounds: Evidence of an enthalpy-entropy compensation effect;Journal of Applied Physics;2018-09-07
2. Mid-IR optical properties of silicon doped InP;Optical Materials Express;2017-06-07
3. LP-MOVPE growth and properties of high Si-doped InGaAs contact layer for quantum cascade laser applications;Opto-Electronics Review;2016-01-01
4. The Science and Practice of Metal-Organic Vapor Phase Epitaxy (MOVPE);Handbook of Crystal Growth;2015
5. Epitaxial Growth;Materials Science and Technology;2013-02-15
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