Vacancy self-trapping during rapid thermal annealing of silicon wafers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2385069
Reference14 articles.
1. Gettering thresholds for transition metals by oxygen‐related defects in silicon
2. Grown‐in Oxide Precipitate Nuclei in Czochralski Silicon Substrates and Their Role in Device Processing
3. Diffusion limited oxygen precipitation in silicon: Precipitate growth kinetics and phase formation
4. Denuded zone formation by conventional and rapid thermal anneals
5. On the Properties of the Intrinsic Point Defects in Silicon: A Perspective from Crystal Growth and Wafer Processing
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