Diffusion, activation, and recrystallization of boron implanted in preamorphized and crystalline germanium
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2117631
Reference18 articles.
1. Solid-Phase-Epitaxial Growth in Ion-Implanted Silicon
2. Chemical and electrical dopants profile evolution during solid phase epitaxial regrowth
3. Diffusion of boron in germanium at 800–900°C
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