Spatial resolution of capacitance-voltage profiles in quantum well structures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.121011
Reference7 articles.
1. On the theory of Debye averaging in the C-V profiling of semiconductors
2. Spatial resolution of the capacitance‐voltage profiling technique on semiconductors with quantum confinement
3. Carrier profile evaluation for a Zn‐doped InGaAsP/InGaAsP multiquantum well using a low‐temperature capacitance‐voltage method
4. Electron distribution and capacitance-voltage profiles of multiple quantum well structure from self-consistent simulations
5. Electrical characterization of partially relaxed InxGa1−xAs/GaAs multiple quantum well structures
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1. Defect characterization of proton irradiated GaAs pn-junction diodes with layers of InAs quantum dots;Journal of Applied Physics;2016-05-14
2. An effective approach for the minimization of errors in capacitance-voltage carrier profiling of quantum structures;Journal of Applied Physics;2014-04-07
3. Conduction band offset and quantum states probed by capacitance–voltage measurements for InP/GaAs type-II ultrathin quantum wells;Journal of Applied Physics;2011-04
4. Inconsistent temperature dependence in capacitance-voltage profiling of quantum wells;Journal of Applied Physics;2011-03
5. Observation of electron confinement in InP/GaAs type-II ultrathin quantum wells;Applied Physics Letters;2010-09-13
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