Inconsistent temperature dependence in capacitance-voltage profiling of quantum wells
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3554673
Reference14 articles.
1. Capacitance-voltage profiling and the characterisation of III-V semiconductors using electrolyte barriers
2. Conduction-band offsets in pseudomorphicInxGa1−xAs/Al0.2Ga0.8As quantum wells (0.07≤x≤0.18) measured by deep-level transient spectroscopy
3. Conduction‐ and valence‐band offsets in GaAs/Ga0.51In0.49P single quantum wells grown by metalorganic chemical vapor deposition
4. Determination of band offsets in strainedInxGa1−xAs∕GaAsquantum wells by capacitance-voltage profiling and Schrödinger-Poisson self-consistent simulation
5. Simulation of the capacitance–voltage characteristics of a single‐quantum‐well structure based on the self‐consistent solution of the Schrödinger and Poisson equations
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Light-induced capacitance enhancement and successive carrier escape in InGaN/GaN multiple quantum wells;Journal of Applied Physics;2020-01-14
2. An effective approach for the minimization of errors in capacitance-voltage carrier profiling of quantum structures;Journal of Applied Physics;2014-04-07
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