Conduction-band offsets in pseudomorphicInxGa1−xAs/Al0.2Ga0.8As quantum wells (0.07≤x≤0.18) measured by deep-level transient spectroscopy
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.40.1058/fulltext
Reference13 articles.
1. Lattice mismatch and band offsets in strained layers
2. Resonant tunneling in a GaAs/AlGaAs barrier/InGaAs quantum well heterostructure
3. Determination of the InAs–GaAs(100) heterojunction band discontinuities by x‐ray photoelectron spectroscopy (XPS)
4. Transient capacitance spectroscopy on large quantum well heterostructures
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