Study of single-layer stacking faults in 4H–SiC by deep level transient spectroscopy
Author:
Affiliation:
1. Institute of Microelectronics Technology RAS, Acad. Osipian str., 6, Chernogolovka 142432, Russia
2. National University of Science and Technology MISiS, Leninsky prosp., 4, Moscow 119049, Russia
Funder
Russian Foundation for Basic Research
Ministry of Science and Higher Education of the Russian Federation
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/5.0004423
Reference38 articles.
1. Crystal Defects as Source of Anomalous Forward Voltage Increase of 4H-SiC Diodes
2. Degradation of hexagonal silicon-carbide-based bipolar devices
3. Optical investigation methods for SiC device development: application to stacking faults diagnostic in active epitaxial layers
4. Growth of Shockley type stacking faults upon forward degradation in 4H-SiC p-i-n diodes
5. On the driving force for recombination-induced stacking fault motion in 4H–SiC
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1. Advances and challenges in 4H silicon carbide: defects and impurities;Physica Scripta;2024-08-01
2. Stacking faults in 4H–SiC epilayers and IGBTs;Materials Science in Semiconductor Processing;2024-07
3. Investigation of Electrically Active Defects in SiC Power Diodes Caused by Heavy Ion Irradiation;IEEE Transactions on Nuclear Science;2023-08
4. Cathodoluminescence and EBIC investigations of stacking fault expansion in 4H-SiC due to e-beam irradiation at fixed points;Journal of Physics D: Applied Physics;2022-03-24
5. Relating Gain Degradation to Defects Production in Neutron-Irradiated 4H-SiC Transistors;IEEE Transactions on Nuclear Science;2021-03
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