Carrier escape mechanism in laterally correlated InAs sub-monolayer quantum dots using temperature dependent photoluminescence-Reference-Cited by-同舟云学术

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Carrier escape mechanism in laterally correlated InAs sub-monolayer quantum dots using temperature dependent photoluminescence

Published:2019-11 Issue: Volume:215 Page:116597
ISSN:0022-2313
Container-title:Journal of Luminescence
language:en
Short-container-title:Journal of Luminescence

Author:

Mukherjee S.,Pradhan A.,Mukherjee S.,Maitra T.,Sengupta S.,Chakrabarti S.,Nayak A.,Bhunia S.

Funder

Department of Science and Technology

KEK

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Biochemistry,General Chemistry,Atomic and Molecular Physics, and Optics,Biophysics

Reference46 articles.

1. Submonolayer InGaAs/GaAs quantum dot solar cells

2. Submonolayer quantum dot infrared photodetector

3. Submonolayer Quantum Dots for High Speed Surface Emitting Lasers

4. Dynamics of carrier tunneling and recombination in asymmetric coupled InGaN multiple quantum wells

5. Quantum-dot infrared photodetector with lateral carrier transport

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation of junction electric fields for InAs quantum dot solar cells with photoreflectance spectroscopy;Current Applied Physics;2023-06

2. Annealing Impact on Emission of InAs Quantum Dots in GaAs/Al0.30Ga0.70As Structures with Different Capping Layers;Journal of Electronic Materials;2021-05-27

3. Correlation between the structure and luminescence of InAs submonolayer stacked nanostructures;Japanese Journal of Applied Physics;2021-01-14

4. Carrier transport and recombination dynamics of InAs/GaAs sub-monolayer quantum dot near infrared photodetector;Journal of Physics D: Applied Physics;2019-10-04

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