Light-induced capacitance enhancement and successive carrier escape in InGaN/GaN multiple quantum wells
Author:
Affiliation:
1. Department of Physics, Yonsei University, Seoul 120-749, South Korea
2. Department of Physics, Kongju National University, Kongju, Chungnam 314-701, South Korea
Funder
National Research Foundation of Korea
Korea Institute of Energy Technology Evaluation and Planning
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5108915
Reference32 articles.
1. Doping in III-V Semiconductors
2. Inconsistent temperature dependence in capacitance-voltage profiling of quantum wells
3. Simulation of the capacitance–voltage characteristics of a single‐quantum‐well structure based on the self‐consistent solution of the Schrödinger and Poisson equations
4. Experimental evidences of quantum confined 2D indirect excitons in single barrier GaAs/AlAs/GaAs heterostructure using photocapacitance at room temperature
5. Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
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