Experimental evidences of quantum confined 2D indirect excitons in single barrier GaAs/AlAs/GaAs heterostructure using photocapacitance at room temperature-Reference-Cited by-同舟云学术

Experimental evidences of quantum confined 2D indirect excitons in single barrier GaAs/AlAs/GaAs heterostructure using photocapacitance at room temperature

Published:2018-01-28 Issue:4 Volume:123 Page:044305
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Bhunia Amit¹,Singh Mohit Kumar¹,Galvão Gobato Y.²^ORCID,Henini Mohamed³⁴,Datta Shouvik¹^ORCID

Affiliation:

1. Department of Physics and Center for Energy Science, Indian Institute of Science Education and Research, Pune 411008, Maharashtra, India

2. Departamento de Física, Universidade Federal de São Carlos, 13560-905 São Carlos, SP, Brazil

3. School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, United Kingdom

4. UNESCO-UNISA Africa Chair in Nanoscience and Nanotechnology Laboratories, College of Graduate Studies, University of South Africa (UNISA), Muckleneuk Ridge, P.O. Box 392, Pretoria, South Africa

Funder

UK Engineering and Research Council

DST | Science and Engineering Research Board

Fundação de Amparo à Pesquisa do Estado de São Paulo

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5007820

Reference39 articles.

1. Free excitons in room-temperature photoluminescence of GaAs-AlxGa1−xAsmultiple quantum wells