Carrier profile evaluation for a Zn‐doped InGaAsP/InGaAsP multiquantum well using a low‐temperature capacitance‐voltage method
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.108981
Reference3 articles.
1. High quantum efficiency, high power, modulation doped GaInAs strained-layer quantum well laser diodes emitting at 1.5 μm
2. Cavity length and doping dependence of 1.5- mu m GaInAs/GaInAsP multiple quantum well laser characteristics
3. A self-consistent two-dimensional model of quantum-well semiconductor lasers: optimization of a GRIN-SCH SQW laser structure
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