Well depth fluctuation of Si1−xGex/Si quantum well structures studied by conductance–voltage technique
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.368603
Reference12 articles.
1. Measurement of isotype heterojunction barriers byC‐Vprofiling
2. A simple method of modelling the C-tV profiles of high-low junctions and heterojunctions
3. Analytical calculation of the capacitance associated with a single quantum well located in a junction
4. Simulation of capacitance-voltage profiles for the analysis of measurements at a p-type Si-SiGe-Si single quantum well
5. Capacitance-voltage characteristics of a Schottky junction containing SiGe/Si quantum wells
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Effect of interface polarization charge on the performance of nitride semiconductor light emitting diodes;SPIE Proceedings;2008-02-07
2. ADMITTANCE SPECTROSCOPY AFFECTED BY SURFACE POTENTIAL IN QUANTUM WELL STRUCTURE;Acta Physica Sinica;2000
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