Capacitance-voltage characteristics of a Schottky junction containing SiGe/Si quantum wells
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.53.4623/fulltext
Reference11 articles.
1. Spatial resolution of the capacitance‐voltage profiling technique on semiconductors with quantum confinement
2. Measurement of isotype heterojunction barriers byC‐Vprofiling
3. Simulation of capacitance-voltage profiles for the analysis of measurements at a p-type Si-SiGe-Si single quantum well
4. Determination of valence and conduction‐band discontinuities at the (Ga,In) P/GaAs heterojunction byC‐Vprofiling
5. The determination of valence band discontinuities in Si/Si1−xGex/Si heterojunctions by capacitance‐voltage techniques
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