ADMITTANCE SPECTROSCOPY AFFECTED BY SURFACE POTENTIAL IN QUANTUM WELL STRUCTURE
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Published:2000
Issue:6
Volume:49
Page:1136
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ISSN:1000-3290
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Container-title:Acta Physica Sinica
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language:
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Short-container-title:Acta Phys. Sin.
Author:
GAO QI ,ZHANG SHEN-KUN ,JIANG ZUI-MIN ,LU FANG ,
Abstract
The activated energy of single quantum well structures obtained by the admittance measurements is varied with different thickness of capping layer and with one sample under different applied bias voltages.The electric potential distribution is the key effect on the energy variation.The correctness of the measured results can be judged by using the admittance measurements under different applied bias voltages
Publisher
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Subject
General Physics and Astronomy