Analytical calculation of the capacitance associated with a single quantum well located in a junction
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.347480
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1. Determination of the density of states in quantum wells and quantum dot arrays by the capacitance-voltage method;Semiconductors;1999-10
2. Deep and shallow electronic states at ultrathin InAs insertions in GaAs investigated by capacitance spectroscopy;Journal of Applied Physics;1998-12
3. Well depth fluctuation of Si1−xGex/Si quantum well structures studied by conductance–voltage technique;Journal of Applied Physics;1998-11-15
4. Deep-level transient spectroscopy study of narrow SiGe quantum wells with high Ge content;Physical Review B;1996-12-15
5. Analysis of capacitance-voltage characteristics ofSi1−xGex/Si quantum-well structures;Physical Review B;1996-09-15
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