Theoretical calculation of band-edge discontinuities near a strained heterojunction: Application to (In,Ga)As/GaAs
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.38.9870/fulltext
Reference23 articles.
1. Determination of the InAs–GaAs(100) heterojunction band discontinuities by x‐ray photoelectron spectroscopy (XPS)
2. Optical investigation of a new type of valence-band configuration inInxGa1−xAs-GaAs strained superlattices
3. Variation of the critical layer thickness with In content in strained InxGa1−xAs‐GaAs quantum wells grown by molecular beam epitaxy
4. Band edge offsets in strained (InGa)As-(AlGa)As heterostructures
5. Investigation of GaAs/AlxGa1−xAs and InyGa1−yAs/GaAs superlattices on Si substrates
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