Electronic states of ultrathin InAs/InP (001) quantum wells: A tight-binding study of the effects of band offset, strain, and intermixing
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.66.195303/fulltext
Reference32 articles.
1. Strained InAs/InP quantum wells and quantum dots for optoelectronic device applications
2. Exciton resonances in ultrathin InAs/InP quantum wells
3. Excitons in ultrathin InAs/InP quantum wells: Interplay between extended and localized states
4. Growth and characterization of InAs on (100) InP ultrathin single quantum wells using tertiarybutylarsine and tertiarybutylphosphine
5. Optical properties of InAs/InP ultrathin quantum wells
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