Growth and characterization of InAs on (100) InP ultrathin single quantum wells using tertiarybutylarsine and tertiarybutylphosphine-Reference-Cited by-同舟云学术

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Growth and characterization of InAs on (100) InP ultrathin single quantum wells using tertiarybutylarsine and tertiarybutylphosphine

Published:2002-05 Issue:3 Volume:20 Page:1132-1134
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Frankland D.,Masut R. A.,Leonelli R.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.1474412

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Manganese phosphide nanoclusters embedded in epitaxial gallium phosphide grown from the vapor phase: Non-negligible role of Mn diffusion in growth kinetics;Journal of Vacuum Science & Technology A;2022-09

2. Carrier thermal escape in families of InAs/InP self-assembled quantum dots;Physical Review B;2010-06-18

3. Optical emission from InAs/InP self-assembled quantum dots: evidence for As/P intermixing;Semiconductor Science and Technology;2007-11-01

4. Precursors to Semiconducting Materials;Comprehensive Organometallic Chemistry III;2007

5. Raman study of optical phonons in ultrathinInAs∕InPsingle strained quantum wells;Physical Review B;2005-08-19

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