Determination of band offsets in strained InAsxP1−x/InP quantum well by capacitance voltage profile and photoluminescence spectroscopy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3561495
Reference29 articles.
1. Strained-layer InGaAs-GaAs-AlGaAs photopumped and current injection lasers
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3. An In0.15Ga0.85As/GaAs pseudomorphic single quantum well HEMT
4. Use of pseudomorphic GaInAs in Heterojunction Bipolar Transistors
5. Photoluminescence excitation spectroscopy of InAs0.67P0.33/InP strained single quantum wells
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3. Influence of interface states on built-in electric field and diamagnetic-Landau energy shifts in asymmetric modulation-doped InGaAs/GaAs QWs;Journal of Physics D: Applied Physics;2022-07-11
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