Use of pseudomorphic GaInAs in Heterojunction Bipolar Transistors
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference9 articles.
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2. Proc. 12th Intern. Symp. on GaAs and Related Compounds;Zipperian,1986
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4. (GaAl)As/GaAs heterojunction bipolar transistors with graded composition in the base
5. High‐gain, high‐frequency AlGaAs/GaAs graded band‐gap base bipolar transistors with a Be diffusion setback layer in the base
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1. Determination of band offsets in strained InAsxP1−x/InP quantum well by capacitance voltage profile and photoluminescence spectroscopy;Journal of Applied Physics;2011-04-15
2. Low-voltage InAsP/InAs HBT and metamorphic InAs BJT devices grown by molecular beam epitaxy;Journal of Crystal Growth;2003-04
3. InAs-based bipolar transistors grown by molecular beam epitaxy;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2002
4. Temperature dependence of photoluminescence from InAsP/InP strained quantum well structures grown by metalorganic chemical vapor deposition;Journal of Crystal Growth;2000-01
5. Structural and optical properties of strain‐relaxed InAsP/InP heterostructures grown by metalorganic vapor phase epitaxy on InP(001) using tertiarybutylarsine;Journal of Applied Physics;1996-07-15
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