High‐gain, high‐frequency AlGaAs/GaAs graded band‐gap base bipolar transistors with a Be diffusion setback layer in the base
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.95553
Reference12 articles.
1. Heterostructure bipolar transistors and integrated circuits
2. High-frequency characteristics of AlGaAs/GaAs heterojunction bipolar transistors
3. GaAs/(Ga,Al)As heterojunction bipolar transistors with buried oxygen-implanted isolation layers
4. Electron drift velocity measurement in compositionally graded AlxGa1−xAs by time‐resolved optical picosecond reflectivity
5. Measurement of high electron drift velocity in a submicron, heavily doped graded gap AlxGa1−xAs layer
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