Optical properties of InAs/InP ultrathin quantum wells
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference31 articles.
1. Origin of sharp lines in photoluminescence emission from submonolayers of InAs in GaAs
2. Self-aggregated InAs quantum dots in GaAs
3. Energy levels and exciton oscillator strength in submonolayer InAs-GaAs heterostructures
4. Optical and structural properties of metalorganic-vapor-phase-epitaxy-grown InAs quantum wells and quantum dots in InP
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1. Influence of hydrostatic pressure, temperature, and terahertz laser field on the electron-related optical responses in an asymmetric double quantum well;The European Physical Journal B;2021-06
2. Electronic and Optical Properties of Quantum Dot Surrounded by Doped Cylindrical Nanowire;Acta Physica Polonica A;2020-09
3. Fabrication and optical properties of type-II InP/InAs nanowire/quantum-dot heterostructures;physica status solidi (RRL) - Rapid Research Letters;2015-11-26
4. Polaron Dependent Optical Properties of Exciton in a Strained GaxIn1–xAs/GaAs Quantum Dot;Journal of Computational and Theoretical Nanoscience;2015-04-01
5. Absorption coefficients for interband optical transitions in a strained InAs1−xPx/InP quantum wire;Journal of Luminescence;2014-03
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