Band edge offsets in strained (InGa)As-(AlGa)As heterostructures
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference15 articles.
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3. A GaAsxP1−x/GaP strained‐layer superlattice
4. Dependence of critical layer thickness on strain for InxGa1−xAs/GaAs strained‐layer superlattices
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3. Interface simulation of strained and non-abrupt III–V quantum wells. Part 1: band profile calculation;Computer Physics Communications;1996-01
4. Photoluminescence studies of strained InxGa1−xAs‐Al0.28Ga0.72As heterostructures grown by molecular‐beam epitaxy;Journal of Applied Physics;1994-07
5. A photoluminescence study of the effect of well thickness in strained InGaAs/AlGaAs heterostructures grown by molecular beam epitaxy;Journal of Materials Research;1994-07
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