Photoluminescence studies of strained InxGa1−xAs‐Al0.28Ga0.72As heterostructures grown by molecular‐beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.357135
Reference23 articles.
1. GaAs/(In,Ga)As,p‐channel, multiple strained quantum well field‐effect transistors with high transconductance and high peak saturated drain current
2. Room‐temperature pseudomorphic InxGa1−xAs/GaAs quantum well surface‐emitting lasers at 0.94–1.0 μm wavelengths
3. Transition-metal impurities in semiconductors and heterojunction band lineups
4. Strain effects and band offsets in GaAs/InGaAs strained layered quantum structures
5. Band offsets for strainedInxGa1−xAs/AlyGa1−yAs heterointerfaces
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1. Compositional dependence of the bowing parameter for highly strained InGaAs/GaAs quantum wells;Physical Review B;2009-10-06
2. Electrical behavior of modulation-and delta-doped Al x Ga1 − x As/In y Ga1 − y As/GaAs PHEMT structures;Russian Microelectronics;2006-03
3. Compressively strainedp-type InGaAs/AlGaAs quantum-well infrared photodetectors;Journal of Applied Physics;2002-11-15
4. Strained p-type InGaAs/AlGaAs multiple quantum well infrared photodetectors;SPIE Proceedings;2002-09-18
5. Six-band k/spl middot/p approach to the effects of doping on energy dispersion in p-type strained In/sub 0.15/Ga/sub 0.85/As-Al/sub 0.33/Ga/sub 0.67/As quantum-well structures;IEEE Journal of Quantum Electronics;2000-07
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