Band offsets for strainedInxGa1−xAs/AlyGa1−yAs heterointerfaces
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.41.9843/fulltext
Reference20 articles.
1. InxGa1−xAs−InyGa1−yAsstrained-layer superlattices: A proposal for useful, new electronic materials
2. Optical investigation of a new type of valence-band configuration inInxGa1−xAs-GaAs strained superlattices
3. Strained-layer InGaAs-GaAs-AlGaAs photopumped and current injection lasers
4. Characteristics of strained In/sub 0.65/Ga/sub 0.35/As/In/sub 0/./sub 52/Al/sub 0/./sub 48/As HEMT with optimized transport parameters
5. Transition-metal impurities in semiconductors and heterojunction band lineups
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1. Intersubband transitions in InGaAsN/GaAs quantum wells;Journal of Applied Physics;2008-09
2. Dilute nitride based double-barrier quantum wells for intersubband absorption at 1.31 and1.55 μm;Physical Review B;2008-03-25
3. Design of InxGa1−xAs1−yNy∕AlAs quantum cascade structures for 3.4μm intersubband emission;Journal of Applied Physics;2007-04-15
4. Theoretical study of quantum well infrared photodetectors with asymmetric well and barrier structures for broadband photodetection;Journal of Applied Physics;2007-02
5. Ultra-low-frequency self-oscillation of photocurrent in InxGa1−xAs∕Al0.15Ga0.85As multiple-quantum-well p–i–n diodes;Applied Physics Letters;2004-10-18
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