GaAs/(In,Ga)As,p‐channel, multiple strained quantum well field‐effect transistors with high transconductance and high peak saturated drain current
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.99246
Reference16 articles.
1. Complementary GaAs MESFET logic gates
2. IIIA-3 modulation-doped field-effect transistors and logic gates based on two-dimensional hole gas
3. Light‐hole conduction in InGaAs/GaAs strained‐layer superlattices
4. Hall‐effect measurements inp‐type InGaAs/GaAs strained‐layer superlattices
5. p‐channel, strained quantum well, field‐effect transistor
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