Electrical behavior of modulation-and delta-doped Al x Ga1 − x As/In y Ga1 − y As/GaAs PHEMT structures-Reference-Cited by-同舟云学术

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Electrical behavior of modulation-and delta-doped Al x Ga1 − x As/In y Ga1 − y As/GaAs PHEMT structures

Published:2006-03 Issue:2 Volume:35 Page:67-73
ISSN:1063-7397
Container-title:Russian Microelectronics
language:en
Short-container-title:Russ Microelectron

Author:

Galiev G. B.,Vasil’evskii I. S.,Klimov E. A.,Mokerov V. G.

Publisher

Pleiades Publishing Ltd

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063739706020016.pdf

Reference13 articles.

1. Shur, M., GaAs Devices and Circuits, New York: Plenum, 1987. Translated under the title Sovremennye pribory na osnove arsenida galliya, Moscow: Mir, 1991.

2. Tan, K.L., Dia, R.M., Streit, D.C., Han, A.C., Trinh, T.Q., Velebir, J.R., Liu, P.H., Lin, T., Yen, H.C., Sholley, M., and Shaw, L., Ultralow-Noise W-Band Pseudomorphic InGaAs HEMT’s, IEEE Electron Device Lett., 1990, vol. 11, no. 7, pp. 303–305.

3. Tan, K.L., Dia, R.M., Streit, D.C., Lin, T., Trinh, T., Han, A.C., Liu, P.H., Chow, P.D., and Yen, H.C., 94-GHz 0.1-µm T-Gate Low-Noise Pseudomorphic InGaAs HEMT’s, IEEE Electron Device Lett., 1990, vol. 11, no. 12, pp. 585–587.

4. Haddab, Y., Deveaud, B., Bühlmann, H.-J., and Ilegems, M., Low-Frequency Noise Measurements of AlxGa1 − x As/InyGa1 − y As/GaAs High Electron Mobility Transistors, J. Appl. Phys., 1995, vol. 78, no. 4, pp. 2509–2514.

5. Chou, Y.C., Li, G.P., Chen, Y.C., Wu, C.S., Yu, K.K., and Midford, T.A., Off State Breakdown Effects on Gate Leakage Current in Power Pseudomorphic AlGaAs/InGaAs HEMT’s, IEEE Electron Device Lett., 1996, vol. 17, no. 11, pp. 479–481.

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electrical and structural properties of PHEMT heterostructures based on AlGaAs/InGaAs/AlGaAs and δ-doped on two sides;Semiconductors;2008-09

2. Effect of the spacer growth temperature on the electrophysical and structural properties of PHEMTs;Technical Physics;2007-04

3. The effect of spacer-layer growth temperature on mobility in a two-dimensional electron gas in PHEMT structures;Semiconductors;2006-12

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