94-GHz 0.1- mu m T-gate low-noise pseudomorphic InGaAs HEMTs-Reference-Cited by-同舟云学术

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94-GHz 0.1- mu m T-gate low-noise pseudomorphic InGaAs HEMTs

Published:1990-12 Issue:12 Volume:11 Page:585-587
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Tan K.L.,Dia R.M.,Streit D.C.,Lin T.,Trinh T.Q.,Han A.C.,Liu P.H.,Chow P.-M.D.,Yen H.C.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx1/55/2301/00063047.pdf?arnumber=63047

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