(100) Si/SiO2interface states above midgap induced by Fowler‐Nordheim tunneling electron injection
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.363709
Reference37 articles.
1. The effect of gate metal and SiO2thickness on the generation of donor states at the Si‐SiO2interface
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3. Generation of positive charge in silicon dioxide during avalanche and tunnel electron injection
4. Generation‐annealing kinetics of the interface donor states at 0.25 eV above the midgap and the turn‐around phenomena on oxidized silicon during avalanche electron injection
5. Interface trap generation in silicon dioxide when electrons are captured by trapped holes
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2. Investigation of interface traps at Si/SiO2 interface of SOI pMOSFETs induced by Fowler–Nordheim tunneling stress using the DCIV method;Applied Physics A;2018-08-10
3. THERMAL OXIDATION OF SILICON AND Si-SiO2 INTERFACE MORPHOLOGY, STRUCTURE AND LOCALIZED STATES;Handbook of Surfaces and Interfaces of Materials;2001
4. A deconvolution of the transient response of (100) Si/SiO2 semiconductor–insulator interface states according to small pulse excitation: evidence of different branches of charge transition;Solid-State Electronics;2000-08
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