Generation‐annealing kinetics of the interface donor states at 0.25 eV above the midgap and the turn‐around phenomena on oxidized silicon during avalanche electron injection-Reference-Cited by-同舟云学术

Generation‐annealing kinetics of the interface donor states at 0.25 eV above the midgap and the turn‐around phenomena on oxidized silicon during avalanche electron injection

Published:1983-05 Issue:5 Volume:54 Page:2547-2555
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Sah Chih‐Tang,Sun Jack Yuan‐Chen,Tzou Joseph Jeng‐Tao

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.332324

Reference30 articles.

1. Effects of ionizing radiation on oxidized silicon surfaces and planar devices

2. Origin of Interface States and Oxide Charges Generated by Ionizing Radiation

3. 1 µm MOSFET VLSI technology: Part VIII—Radiation effects

4. Oxide charges induced in thermal silicon dioxide by scanning electron and laser beam annealing

5. AVALANCHE INJECTION CURRENTS AND CHARGING PHENOMENA IN THERMAL SiO2

Cited by 70 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Temperature selectivity of the radiation effect on silicon MOS transistors;Semiconductors;2014-05

2. The effect of rare-earth clustering on charge trapping and electroluminescence in rare-earth implanted metal-oxide-semiconductor light-emitting devices;Journal of Applied Physics;2010-06-15

3. Radiation-enhanced thermal oxidation of silicon;Russian Microelectronics;2007-02

4. Effects of energy distribution of interface traps on recombination dc current-voltage line shape;Journal of Applied Physics;2006

5. Effects of localized contamination with copper in MOSFETs;IEEE Electron Device Letters;2002-08